Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure.
نویسندگان
چکیده
A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.
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ورودعنوان ژورنال:
- Small
دوره 12 30 شماره
صفحات -
تاریخ انتشار 2016